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AM1011-070
.REFRACTORY/ .EMI .LOW .I .OVERLAY .METAL/ .P
DESCRIPTION
RF & MICROWAVE TRANSISTORS L-BAND AVIONICS APPLICATIONS
G OLD METALLIZATION T TER SITE BALLASTED THERMAL RESISTANCE N PUT/OUTPUT MATCHING GEOMETRY C ERAMIC HERMETIC PACKAGE OUT = 70 W MIN. WITH 6.7 dB GAIN
.400 x .400 2NLFL (S042) hermetically sealed ORDER CODE AM1011-70 BRANDING 1011-70
PIN CONNECTION
The AM1011-070 device is a high power Class C transistor specifically designed for L-Band Avionics transponder/interrogator pulsed output and driver applications. This device is capable of operation over a wide range of pulse widths, duty cycles and temperatures and is capable of withstanding severe output VSWR at rated RF conditions. Low RF thermal resistance and computerized automatic wire bonding techniques ensure high reliability and product consistency. The AM1011-070 is supplied in the AMPACTM Hermetic M etal/Ceramic package with i nternal Input/Output matching structures. ABSOLUTE MAXIMUM RATINGS (T case = 25 C)
Symbol Parameter Value Unit 1. Collector 2. Base 3. Emitter 4. Base
PDISS IC VCC TJ T STG
Power Dissipation* Device Current*
(TC 100C)
200 8.0 32 250 - 65 to +200
W A V C C
Collector-Supply Voltage* Junction Temperature (Pulsed RF Operation) Storage Temperature
THERMAL DATA RTH(j-c) Junction-Case Thermal Resistance* 0.68 C/W
*Applies only to rated RF amplifier operation
September 1992
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AM1011-070
ELECTRICAL SPECIFICATIONS (T case = 25 C) STATIC
Symbol Test Conditions Valu e Min. Typ. Max. Unit
BVCBO BVEBO BVCER ICES hFE
IC = 25mA IE = 10mA IC = 25mA VCE = 35V VCE = 5V
IE = 0mA IC = 0mA RBE = 10 IC = 2mA
55 3.5 55 -- 20
-- -- -- -- --
-- -- -- 20 200
V V V mA --
DYNAMIC
Symbol Test Conditions Value Min. Typ. Max. Unit
POUT c GP
Note:
f = 1090 MHz f = 1090 MHz f = 1090 MHz = =
100 Sec 2%
PIN = 15W PIN = 15W PIN = 15W
VCC = 28V VCC = 28V VCC = 28V
70 45 6.7
-- -- --
-- -- --
W % dB
Pulse W idth Duty Cycle
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AM1011-070
IMPEDANCE DATA
TYPICAL INPUT IMPEDANCE ZIN FREQ. TYPICAL COLLECTOR LOAD IMPEDANCE ZCL L = 1025 MHz H = 1090 MHz ZIN () 4.7 + j 4.7 4.7 + j 3.9 ZCL () 3.6 + j 4.3 3.3 + j 4.4
PIN = 15 W VCC = 28 V Normalized to 50 ohms
TEST CIRCUIT Ref. Dwg. No. J313119
All dimensions are in inches. Substrate material: .025 thick AI2O 3 C1 C2 C3 C4 : : : : 0.3--3.5 pF Johanson Gigatrim Capacitor 0.3--3.5 pF Johanson Gigatrim Capacitor 100 pF Chip Capacitor 1500 pF Erie Feedthru, or Equiv. C5 C6 L1 L2 RBE : : : : : 100 MF Electrolytic Capacitor, 50V 1500 pF Erie Feedthrough, or Equiv. #32 Wire, 4 Turn .062 I.D. #32 Wire, 4 Turn .062 I.D. 0 -- 1.0 Ohm
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AM1011-070
PACKAGE MECHANICAL DATA
Information furnished is believed to be accurate and reliable. However, SGS-THOMSON Microelectronics assumes no responsability for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may results from its use. No license is granted by implication or otherwise under any patent or patent rights of SGS-THOMSON Microelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. SGS-THOMSON Microelectronics products are not authorized for use ascritical components in life support devices or systems without express written approval of SGS-THOMSON Microelectonics. (c) 1994 SGS-THOMSON Microelectronics - All Rights Reserved SGS-THOMSON Microelectronics GROUP OF COMPANIES Australia - Brazil - France - Germany - Hong Kong - Italy - Japan - Korea - Malaysia - Malta - Morocco - The Netherlands Singapore - Spain - Sweden - Switzerland - Taiwan - Thailand - United Kingdom - U.S.A
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